MDD56-16N1B中文资料

元器件交易网

Diode Modules

IFRMS=2x 150 AIFAVM=2x 95 AVRRM=800-1800 V

VRSMV 9001300150017001900

VRRMV 8001200140016001800

Type

TO-240 AA

1

32

MDD 56-08N1 BMDD 56-12N1 BMDD 56-14N1 BMDD 56-16N1 BMDD 56-18N1 B

SymbolIFRMSIFAVMIFSM

Test ConditionsTVJ = TVJM

TC = 75°C; 180° sineTC = 100°C; 180° sineTVJ = 45°C;V = 0TVJ = TVJMVR = 0TVJ = 45°CVR = 0TVJ = TVJMVR = 0

t = 10 mst = 8.3 mst = 10 mst = 8.3 mst = 10 mst = 8.3 mst = 10 mst = 8.3 ms

(50 Hz), sine(60 Hz), sine(50 Hz), sine(60 Hz), sine(50 Hz), sine(60 Hz), sine(50 Hz), sine(60 Hz), sine

Maximum Ratings

150A95A71A

140016501200140098001130072008100-40...+150

150-40...+125

AAAAA2sA2sA2sA2s°C°C°CV~V~

Features

International standard packageJEDEC TO-240 AA

Direct copper bonded Al2O3 -ceramicbase plate

Planar passivated chipsIsolation voltage 3600 V~UL registered, E 72873

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òi2dt

TVJTVJMTstgVISOLMdWeightSymbolIRVFVT0rTQSIRMRthJCRthJKdSdAa

50/60 Hz, RMSIISOL £ 1 mA

t = 1 mint = 1 s

Applications

Supplies for DC power equipmentDC supply for PWM inverterField supply for DC motorsBattery DC power supplies

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30003600

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Mounting torque (M5)

Terminal connection torque (M5)Typical including screwsTest ConditionsTVJ= TVJM; VR = VRRMIF = 200 A; TVJ = 25°C

For power-loss calculations onlyTVJ = TVJM

TVJ = 125°C; IF = 50 A, -di/dt = 3 A/msper diode; DC currentper module

per diode; DC currentper module

2.5-4/22-35Nm/lb.in.2.5-4/22-35Nm/lb.in.

90gCharacteristic Values10mA

1.480.83100240.510.2550.710.35512.79.650

VVmWmCA

K/WK/WK/WK/Wmmmmm/s2

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Advantages

Space and weight savingsSimple mounting

Improved temperature and powercycling

Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

other valuessee Fig. 6/7

Creepage distance on surfaceStrike distance through air

Maximum allowable acceleration

Data according to IEC 60747 and refer to a single diode unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensions

Fig. 1Surge overload current

IFSM: Crest value, t: duration

Fig. 2òi2dt versus time (1-10 ms)

Fig. 2aMaximum forward current

at case temperatureFig. 3Power dissipation versus

forward current and ambienttemperature (per diode)

Fig. 4Single phase rectifier bridge:

Power dissipation versus directoutput current and ambienttemperature

R= resistive loadL= inductive load

Fig. 5Three phase rectifier bridge:

Power dissipation versus directoutput current and ambienttemperature

Fig. 6Transient thermal impedance

junction to case (per diode)RthJC for various conduction angles d: DC180°120°60°30°

RthJC (K/W)0.510.530.550.580.62

Constants for ZthJC calculation:i123

Rthi (K/W)0.0130.0550.442

ti (s)0.00150.0450.485

Fig. 7Transient thermal impedance

junction to heatsink (per diode)RthJK for various conduction angles d: DC180°120°60°30°

RthJK (K/W)0.710.730.750.780.82

Constants for ZthJK calculation:i1234

Rthi (K/W)0.0130.0550.4420.2

ti (s)0.00150.0450.4851.25

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