AD404M188RBB-5中文资料

元器件交易网f9a3bc3a3968011ca300919e

ASCEND Semiconductor 4Mx4 EDO

Data sheet

Rev.1Page 1

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 2

Rev.1Page 3 Description

The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable elec-tronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).

Features

? Single 3.3V(%) only power supply

? High speed t RAC acess time: 50/60ns

? Low power dissipation

- Active mode : 432/396 mW (Mas)

- Standby mode: 0.54 mW (Mas)

? Extended - data - out(EDO) page mode access

? I/O level: CMOS level (Vcc = 3.3V)

? 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)

? 4 refresh modesh: - RAS only refresh - CAS - before - RAS refresh

- Hidden refresh

- Self-refresh(S-version)

10±元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 4

Pin Name Function

A0-A10

Address inputs

- Row address - Column address - Refresh address DQ1~DQ4Data-in / data-out RAS Row address strobe CAS Column address strobe WE Write enable OE Output enable Vcc Power (+ 3.3V)Vss

Ground

VCC 1DQ12DQ23DQ34DQ45VCC

6891011 NC 12 WE 13

A0 A117 A218 A319VSS RAS CAS OE A8A7A6A5A4VSS

AD404M42VS

Pin Description Pin Configuration

21222324 25

261514

16 A1026/24-PIN 300mil Plastic SOJ

A9VCC 1DQ12DQ23DQ34DQ45VCC

6891011 NC 12 WE 13

A0 A117 A218 A319VSS RAS CAS OE A8A7 A6A5 A4VSS

AD404M42VT

2122232425261514

16 A1026/24-PIN 300mil Plastic TSOP (ll)

A9A0-A10A0-A10A0-A10元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 5

WE

CAS

NO. 2 CLOCK GENERATOR

COLUMN ADDRESS BUFFERS (11)

REFRESH CONTROLLER

REFRESH COUNTER

BUFFERS (11)

ADDRESS ROW NO. 1 CLOCK GENERATOR

A0RAS

A1A2A3A4A5A6A7A8CONTROL

LOGIC

DATA-IN BUFFER

DATA-OUT BUFFER

OE

DQ1.DQ4

.COLUMN DECODER

2048

SENSE AMPLIFIERS

I/O GATING

2048x4

2048x2048x4MEMORY ARRAY

2048

R O W D E C O D E R

Vcc Vss

Block Diagram

A9

A10

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 6

TRUTH TABLE

Notes: 1. EARLY WRITE only.

FUNCTION

RAS

CAS WE OE ADDRESSES

DQ S

Notes

ROW COL STANDBY H X X X X High-Z READ

L L H L ROW COL Data-Out WRITE: (EARLY WRITE )L L L X ROW COL Data-ln

READ WRITE L L ROW COL Data-Out,Data-ln EDO-PAGE-MODE READ

1st Cycle L H L ROW COL Data-Out 2nd Cycle

L H L n/a COL Data-Out EDO-PAGE MODE WRITE

1st Cycle

L L X ROW COL Data-In 2nd Cycle L L X

n/a COL Data-In

EDO-

PAGE-MODE

READ-WRITE 1st Cycle L ROW COL Data-Out, Data-In 2nd Cycle L n/a COL Data-Out, Data-In HIDDEN REFRESH

READ L H L ROW COL Data-Out WRITE

L L X ROW COL Data-In 1

RAS-ONLY REFRESH L H X X ROW n/a High-Z CBR REFRESH

L

H

X

X

X

High-Z

H X →H L →L H →H L →H L →H L →H L →H L →H L →L H →H L →H L →L H

→L H L →→L H L

→→H L

→元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 7

Absolute Maximum Ratings

Recommended DC Operating Conditions

Capacitance

Ta = 25°C, V CC = 3.3V

%, f = 1MHz Note: 1. Capacitance measured with effective capacitance measuring method. 2. RAS, CAS = V IH to disable Dout.

Parameter

Symbol Value Unit Voltage on any pin relative to Vss V T -0.5 to + 4.6V Supply voltage relative to Vss V CC -0.5 to + 4.6

V Short circuit output current I OUT 50mA Power dissipation P D 1.0W

Operating temperature T OPT 0 to + 70°C Storage temperature

T STG

-55 to + 125

°C

Parameter/Condition Symbol

3.3 Volt Version

Unit

Min

Typ Max

Supply Voltage

V CC 3.0 3.3

3.6

V Input High Voltage, all inputs V IH 2.0-V CC + 0.3V Input Low Voltage, all inputs

V IL

-0.3

-0.8

V

Parameter

Symbol Typ Max Unit Note Input capacitance (Address)

C I1 -5pF 1Input capacitance (RAS, CAS, OE, WE)C I2-7pF 1Output capacitance

(Data-in, Data-out)

C I/O

-

7

pF

1, 2

10±元器件交易网f9a3bc3a3968011ca300919e

DC Characteristics :

(T a = 0 to 70°C, V CC = + 3.3V%, V SS = 0V)

Parameter Symbol Test Conditions AD404M42V Unit Notes

-5-6

Min Max Min Max

Operating current I CC1RAS cycling

CAS, cycling

t RC = min

-120-110mA1, 2

Standby Current Low

power

S-version

I CC2LVTTL interface

RAS, CAS = V IH

Dout = High-Z

-0.5-0.5mA

CMOS interface

RAS, -0.2V

Dout = High-Z

-0.15-0.15mA

Standard

power

version

LVTTL interface

RAS, CAS = V IH

Dout = High-Z

-2-2mA

CMOS interface

RAS,-0.2V

Dout = High-Z

-0.5-0.5mA

RAS- only refresh current I CC3RAS cycling, CAS = V IH

t RC = min

-120-110mA1, 2 EDO page mode current I CC4t PC = min-90-80mA1, 3

CAS- before- RAS refresh current I CC5t RC = min

RAS, CAS cycling

-120-110mA1, 2

Self- refresh current (S-Version)

I CC8 - 550 - 550

10

±

CAS V CC

≥

CAS V CC

≥

t RASS100μs

≥μA

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 8

Rev.1Page 9

DC Characteristics :

(T a = 0 to 70°C , V CC = +3.3V %, V SS = 0V)

Notes:

1. I CC is specified as an average current. It depends on output loading condition and cycle rate when the device is selected. I CC max is specified at the output open condition.

2. Address can be changed once or less while RAS = V IL .

3. For I CC4, address can be changed once or less within one EDO page mode cycle time.

Parameter Symbol Test Conditions AD404M42V

Unit

Notes

-5

-6Min Max

Min Max

Input leakage current I LI + 0.3V -55-55Output leakage current I LO + 0.3V Dout = Disable -5

5

-55

Output high Voltage V OH I OH = -2mA 2.4- 2.4-V Output low voltage V OL

I OL = +2mA

-0.4

-0.4

V

10±0V Vin V CC ≤≤μA 0V Vout V CC ≤≤μA 元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 10

AC Characteristics

(T a = 0 to + 70°C , V cc = 3.3V %, V ss = 0V) *1, *2, *3, *4

Test conditions

? Output load: one TTL Load and 100pF (V CC = 3.3V %)? Input timing reference levels:

V IH = 2.0V, V IL = 0.8V (V CC = 3.3V %)? Output timing reference levels:V OH = 2.0V, V OL = 0.8V

10±10±10±Read, Write, Read- Modify- Write and Refresh Cycles (Common Parameters)

Parameter

Symbol AD404M42V Unit

Notes

-5

-6Min Max

Min Max

Random read or write cycle time t RC 84-104-ns RAS precharge time

t RP 30-40-ns CAS precharge time in normal mode t CPN 10-10-ns RAS pulse width t RAS 50100006010000ns 5CAS pulse width t CAS 810000

1010000

ns 6

Row address setup time t ASR 0-0-ns Row address hold time t RAH 8-10-ns Column address setup time t ASC 0-0-ns 7Column address hold time t CAH 8-10-ns RAS to CAS delay time

t RCD 12371445ns 8RAS to column address delay time t RAD 10251230ns 9Column address to RAS lead time t RAL 25-30-ns RAS hold time t RSH 8-10-ns CAS hold time

t CSH 38-40-ns CAS to RAS precharge time t CRP 5-5-ns 10OE to Din delay time t OED 12-15-ns Transition time (rise and fall)t T 150150ns 11Refresh period

t REF -32-32ms Refresh period (S- Version)t REF -128-128ms CAS to output in Low- Z t CLZ 0-0-ns CAS delay time from Din t DZC 0-0-ns OE delay time from Din

t DZO

-0-ns

元器件交易网f9a3bc3a3968011ca300919e

Read Cycle

Write Cycle Parameter Symbol

AD404M42V Unit Notes

-5-6

Min Max Min Max

Access time from RAS t RAC-50-60ns12 Access time from CAS t CAC-14-15ns13, 14 Access time from column address t AA-25-30ns14, 15 Access time from OE t OEA-12-15ns

Read command setup time t RCS0-0-ns7 Read command hold time to CAS t RCH0-0-ns10, 16 Read command hold time to RAS t RRH0-0-ns16 Output buffer turn-off time t OFF012015ns17 Output buffer turn-off time from OE t OEZ012015ns17

Parameter Symbol

AD404M42V Unit Notes -5-6

Min Max Min Max

Write command setup time t WCS0-0-ns7, 18

Write command hold time t WCH8-10-ns

Write command pulse width t WP8-10-ns

Write command to RAS lead time t RWL13-15-ns

Write command to CAS lead time t CWL8-10-ns

Data-in setup time t DS0-0-ns19

Data-in hold time t DH8-10-ns19

WE to Data-in delay t WED10-10-ns

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 11

Rev.1Page 12

Read- Modify- Write Cycle

Refresh Cycle

Parameter

Symbol AD404M42V

Unit

Notes

-5

-6Min Max

Min Max

Read-modify- write cycle time t RWC 108-133-ns RAS to WE delay time t RWD 64-77-ns 18CAS to WE dealy time

t CWD 26-32-ns 18Column address to WE delay time t AWD 39-47-ns 18

OE hold time from WE

t OEH

8

-10-ns

Parameter

Symbol

AD404M42V Unit Notes

-5

-6Min

Max

Min

Max

CAS setup time (CBR refresh) t CSR 5-5-ns CAS hold time (CBR refresh)t CHR 8-10-ns 10RAS precharge to CAS hold time t RPC 5-5-ns 7RAS pulse width (self refresh)t RASS 100-100-RAS precharge time (self refresh)t RPS 90-110-ns CAS hold time (CBR self refresh)t CHS -50--50-ns WE setup time t WSR 0-0-ns WE hold time

t WHR

10

-10-ns

μs 元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 13

EDO Page Mode Cycle

EDO Page Mode Read Modify Write Cycle

Parameter

Symbol AD404M42V

Unit Notes

-5

-6Min Max

Min Max

EDO page mode cycle time

t PC 20-25-ns EDO page mode CAS precharge time t CP 10-10-ns EDO page mode RAS pulse width t RASP 5010560105ns 20Access time from CAS precharge t CPA -30-35ns 10, 14RAS hold time from CAS precharge t CPRH 30-35-ns OE high hold time from CAS high t OEHC 5-5-ns OE high pulse width

t OEP 10-10-ns Data output hold time after CAS low t COH 5-5-ns Output disable delay from WE

t WHZ 310310ns WE pulse width for output disable when

CAS high

t WPZ

7

-7-ns

Parameter

Symbol AD404M42V Unit Notes -5

-6Min Max

Min Max

EDO page mode read- modify- write cycle CAS precharge to WE delay time

t CPW 45-55-ns 10

EDO page mode read- modify- write cycle time

t PRWC

56

-68-ns

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 14 Notes :

1. AC measurements assume t T = 2ns.

2. An initial pause of 100 is required after power up, and it followed by a minimum of eight initialization cycles (RAS - only refresh cycle or CAS - before - RAS refresh cycle). If the internal refresh counter is used, a minimun of eight CAS - before - RAS refresh cycles are required.

3. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device.

4. All the V CC and V SS pins shall be supplied with the same voltages.

5. t RAS (min) = t RWD (min)+t RWL (min)+t T in read-modify-write cycle.

6. t CAS (min) = t CWD (min)+t CWL (min)+t T in read-modify-write cycle.

7. t ASC (min), t RCS (min), t WCS (min), and t RPC are determined by the falling edge of CAS .

8. t RCD (max) is specified as a reference point only, and t RAC (max) can be met with the t RCD (max) limit.Otherwise, t RAC is controlled exclusively by t CAC if t RCD is greater than the specified t RCD (max) limit.

9. t RAD (max) is specified as a reference point only, and t RAC (max) can be met with the t RAD (max) limit.Otherwise, t RAC is controlled exclusively by t AA if t RAD is greater than the specified t RAD (max) limit.

10. t CRP , t CHR , t RCH , t CPA and t CPW are determined by the rising edge of CAS .

11. V IH (min) and V IL (max) are reference levels for measuring timing or input signals. Therefore, transition time is measured between V IH and V IL .

12. Assumes that t RCD t

RCD (max) and t RAD t RAD (max). If t RCD or t RAD is greater than the maximum recommended value shown in this table, t RAC exceeds the value shown.

13. Assumes that (max) and (max).

14. Access time is determined by the maximum of t AA , t CAC , t CPA .

15. Assumes that (max) and (max). 16. Either t RCH or t RRH must be satisfied for a read cycle.

17. t OFF (max) and t OEZ (max) define the time at which the output achieves the open circuit condition (high

impedance). t OFF is determined by the later rising edge of RAS or CAS.

18. t WCS , t RWD , t CWD , and t AWD are not restrictive operating parameters. They are included in the data

sheet as electrical characteristics only. If (min), the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If (min),(min), (min) and (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell. If neither of the above sets of conditions is satisfied, the condition of the data output (at access time) is indeterminate. 19. These parameters are referenced to CAS separately in an early write cycle and to WE edge in a

delayed write or a read-modify-write cycle.

20. t RASP defines RAS pulse width in EDO page mode cycles.

μs ≤≤t RCD t RCD ≥t RAD t RAD ≤t RCD t RCD ≤t RAD t RAD

≥t WCS t WCS

≥t RWD t RWD

≥t CWD t CWD ≥t AWD t AWD ≥t CPW t CPW

≥元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 15 Timing Waveforms

? Read Cycle t RC

t RAS t RP

t CRP

t CPN

t RRH t RCH

t OEZ t OFF t OEA

t CAC

t AA

t RAC t CLZ

D OUT

t RCS t ASR t RAH

t ASC t CAH t RAD t RAL

t CAS t RSH t RCD

t T t CSH

RAS

CAS

ADDRESS

WE

DQ1~DQ4

Note : = don’t care

OE

t OFF

Row Column

= Invalid Dout 元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 16 ?Early Write Cycle t RC

t RAS t RP

t WCH

t DS t DH

t WCS t RAL

t CAS t RSH t RCD

t T t CSH

RAS

CAS

WE

DQ1~DQ4t CRP t ASR t RAH

t ASC t CAH ADDRESS Column Row t CPN

D IN

t RAD

t RAL 元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 17 ? Delayed Write Cycle t RC

t RAS t RP

t RWL

t RCS t CAS t RSH t RCD

t T t CSH

RAS

CAS

t ASR t RAH t CAH

ADDRESS Column

Row t ASC D IN

DQ1~DQ4WE

t CRP t CPN

t DH

t DS

t OEH

t OED OE t DS OPEN t WP

t CWL

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 18 ? Read - Modify - Write Cycle t RWC

t RAS t RP

t RWD t WP

t RAD

t RWL t CAS t CWL t RCD t T

t CPN

RAS

CAS

WE

t CRP

t ASR

t RAH t ASC t CAH ADDRESS Column

Row DQ1~DQ4t DH

t DS OE

t RCS t AWD t CWD

D IN

t OED t OEH

t OEZ t OEA t CAC t RAC

t AA DQ1~DQ4D OUT

OPEN t DZC

t DZO 元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 19

? EDO Page Mode Read Cycle

t

RASP

t

CPRH

t RCS

t

CAS

t

RSH t

RCD

t OEA

t

CSH

RAS

CAS

t

ASR

t

RAH

t

CAH

ADDRESS

t

CAS

WE

t

CRP

t CP

OE

DQ1~DQ4

OPEN

t

OEP

D OUT 1

t PC

t CP

t

CAS

t

CPN

t

CRP

t

RAD

t

CAH

t

ASC

t ASC

t

CAH

t ASC

t RAL Row Column 1t OEA

t OEHC

t

RRH t

RCH

t RAC

t AA

t AA

t AA t CPA t CPA t OEZ

t OFF

t OFF

t CAC

t OEZ

t CAC t CAC

t COH

D OUT N

WE OE Column 2Column N Row

t RP

D OUT 2

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 20 ? EDO Page Mode Early Write Cycle t RASP t RP

t WCS t CAS t RSH t RCD RAS

CAS

t ASR t RAH t CAH

ADDRESS t CAS WE

t CP DQ1~DQ4t PC t CP t CAS t CPN

t CRP t CAH t ASC t ASC t CAH t ASC Row Column 1t DS WE Column 2Column N

t WCH t WCS t WCH t WCS t WCH

t DH t DS t DH t DS t DH

D IN 1D IN 2D IN N

t T

t CSH

元器件交易网f9a3bc3a3968011ca300919e

Rev.1Page 21

? EDO Page Mode Read-Early-Write Cycle

t RASP

t

CPRH

t RCS

t

CAS

t

RSH t

RCD

t OEA

t

CSH

RAS

CAS

t

ASR

t

RAH

t

CAH

ADDRESS

t

CAS

WE

t

CRP

t CP

OE

DQ1~DQ4

OPEN

t

WED

t PC

t CP

t

CAS

t

CPN

t

CRP

t

RAD

t

RAH

t

ASC

t ASC

t

CAH

t ASC

t RAL Row Column 1t

WCS

t

RCH

t RAC

t AA

t AA

t CPA t DH

t WHZ

t CAC

t CAC

t COH

WE OE Column 2Column N Row

t RP

t CAL t

WCH

Data

Doutput 2

Data Input N

Data

Doutput 1

t DS

t

CSH 元器件交易网f9a3bc3a3968011ca300919e

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